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50 OHM TYPICAL CHARACTERISTICS
1600
1400
1200
1000
V CC N.C. N.C. N.C.
16 15 14 13
800
600
V BA 1
RF in 2
RF in 3
12 RF out /V CC
11 RF out /V CC
10 RF out /V CC
400
200
V CC = 5 Vdc
RF in 4
5 6 7 8
N.C. N.C. N.C. N.C.
9
RF out /V CC
0
0
1
2
3
(Top View)
55
V BA , BIAS VOLTAGE (V)
Figure 2. Collector Current versus Bias Voltage
at Pin #1
10 6
Pin Connections
50
720 mA
I DC = 850 mA
45
40
35
30
25
20
570 mA
V DC = 5 Vdc
f 1 = 1829 MHz
f 2 = 1830 MHz
10 5
10 4
10 3
15
20
25
30
35
120
125
130
135
140
145
150
P out , OUTPUT POWER (dBm)
NOTE: Supply current is varied under external resistor control. Peak
power is not reduced at any listed current. Similar results can be
obtained for other frequency bands.
Figure 3. Third Order Output Intercept Point
versus Output Power and Supply Current
MMG3006NT1
4
T J , JUNCTION TEMPERATURE ( ° C)
NOTE: The MTTF is calculated with V DC = 5 Vdc, I DC = 850 mA
Figure 4. MTTF versus Junction Temperature
RF Device Data
Freescale Semiconductor
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